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                              4寸晶棒

                              2014-08-31




                              Item


                              4"Specification

                              Unit

                              Remark


                              Substrate grade


                              Sapphire Ingot

                              ~

                               


                              Crystal growth method


                              Kyropulos Al2O3 or another on agreement

                              ~

                               


                              Optical Characteristic


                              High purity optical grade monocrystalline

                              ~

                               


                              Orientation


                              C-plane(0001) ±0.1

                              ~

                               


                              Diameter of ingot


                              100.2,±0.1?

                              mm

                               


                              Length of Prime flat


                              30.0±0.5

                              mm

                               


                              Orientation of Prime flat


                              A-plane(1 1-2 0)± 0.2?

                              ~

                               


                              Rod Length


                              50

                              mm

                               


                              Surface Finish


                              Circumference surface Ra < 1 μm; Both ends surface Ra < 1 μm

                              μm

                               


                              Chip size on both sides

                              < 0.5 mm x 0.5 mm

                              ~

                               

                              Crystal Bubble/Defects Percentage


                              < 15%

                              ~


                              Defects zones include bubbles, scattering centers, grain boundary, twinning, inclusion, stress distortion, and cracks inside. Defect zones need to be marked。


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